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Computational study on silicon oxide plasma enhanced chemical vapor deposition (PECVD) process using tetraethoxysilane/oxygen/argon/helium
http://hdl.handle.net/10258/00009967
http://hdl.handle.net/10258/00009967bb0250f7-e6cc-4b2d-a68f-ec77737048cb
名前 / ファイル | ライセンス | アクション |
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JJAP_58_SE_SEED06 (1.5 MB)
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Item type | 学術雑誌論文 / Journal Article.(1) | |||||||||||
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公開日 | 2019-07-24 | |||||||||||
タイトル | ||||||||||||
言語 | en | |||||||||||
タイトル | Computational study on silicon oxide plasma enhanced chemical vapor deposition (PECVD) process using tetraethoxysilane/oxygen/argon/helium | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
資源タイプ | journal article | |||||||||||
アクセス権 | ||||||||||||
アクセス権 | open access | |||||||||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||
著者 |
LI, Hu
× LI, Hu× HIGUCHI, Hisashi× 川口, 悟× 佐藤, 孝紀
WEKO
9585
× 伝宝, 一樹 |
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室蘭工業大学研究者データベースへのリンク | ||||||||||||
佐藤 孝紀(SATOH Kohki) | ||||||||||||
http://rdsoran.muroran-it.ac.jp/html/100000024_ja.html | ||||||||||||
抄録 | ||||||||||||
内容記述タイプ | Abstract | |||||||||||
内容記述 | Plasma enhanced chemical vapor deposition (PECVD) of silicon oxide (SiO2) using tetraethoxysilane (TEOS) was investigated theoretically by developing an unprecedented plasma chemistry model in TEOS/O2/Ar/He gas mixture. In the gas phase reactions, a TEOS molecule is decomposed by the electron impact reaction and/or chemically oxidative reaction, forming intermediate TEOS fragments, i.e., silicon complexes. In this study, we assume that SiO is the main precursor that contributes to SiO2 film growth under a particular process or simulation condition. The surface reaction was also investigated using quantum mechanical simulations with density functional theory. Based on the gas and surface reaction models, we constructed a computational plasma model for SiO2 film deposition in a PECVD process. The simulation results using CHEMKIN pro and CFD-ACE + have shown that the neutral atomic O and SiO as well as the charged O2 + are the dominant species to obtain a high deposition rate and uniformity. The spatial distributions of various species in the TEOS/O2/Ar/He gas mixture plasma were shown in the study. The uniformity of deposited film due to the change in the plasma bulk property was also discussed. | |||||||||||
言語 | en | |||||||||||
書誌情報 |
en : Japanese Journal of Applied Physics 巻 58, 号 SE, p. SEED06, 発行日 2019-05-30 |
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出版者 | ||||||||||||
言語 | en | |||||||||||
出版者 | Japan Society of Applied Physics | |||||||||||
出版者版へのリンク | ||||||||||||
10.7567/1347-4065/ab163d | ||||||||||||
https://doi.org/10.7567/1347-4065/ab163d | ||||||||||||
DOI | ||||||||||||
関連タイプ | isVersionOf | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | 10.7567/1347-4065/ab163d | |||||||||||
日本十進分類法 | ||||||||||||
主題Scheme | NDC | |||||||||||
主題 | 501 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | PISSN | |||||||||||
収録物識別子 | 0021-4922 | |||||||||||
書誌レコードID | ||||||||||||
収録物識別子タイプ | NCID | |||||||||||
収録物識別子 | AA12295836 | |||||||||||
権利 | ||||||||||||
言語 | en | |||||||||||
権利情報 | © 2019 Japan Society of Applied Physics | |||||||||||
著者版フラグ | ||||||||||||
出版タイプ | AM | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
フォーマット | ||||||||||||
内容記述タイプ | Other | |||||||||||
内容記述 | application/pdf |