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半導体電極を用いた水の光電気分解の研究
http://hdl.handle.net/10258/1096
http://hdl.handle.net/10258/1096367fe29c-1e2c-467f-9398-c84509caddb6
名前 / ファイル | ライセンス | アクション |
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kiyo34_rikou_pp195-201.pdf (591.6 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2014-03-04 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | 半導体電極を用いた水の光電気分解の研究 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Investigation of Photoelectrolysis of Water with Semiconductor Electrodes | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
尾崎, 正義
× 尾崎, 正義× 小野, 正寛× 小林, 秀寿× 南條, 淳二× 野村, 滋× 原, 進一 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Photoelectrolysis of water with two types of semiconductor electrodes which are the Cr-doped single crystal TiO_2, and the Si/TiO_2, heterojunction has been investigated. The Photoresponse of Cr-doped TiO_2, electrode showed longer wave length (visible light region) spectral response than that of non-doped TiO_2, electrode. The visible light response is explained by the formation of the d-band due to Cr-doping below the conduction band edge of the TiO_2, in energy diagram. Photocurrent of Cr-doped TiO_2, electrode, however, decreased. This decrease is mainly due to the structural defects induced in the single crystal TiO_2 by high temperature treatment of Cr-doping resulted in localized deep levels in forbidden band. These deep levels enhance the recombination rate of the photo-generated carriers. The electrode of n-Si/TiO_2, heterojunction was fabricated by coating the Si substrate surface with TiO_2, thin film using CVD technique. The thickness of TiO_2 film determines of the onset potential of photocurrent. The onset potential were shifted to negative potential side with decreasing the TiO_2 film thickness. | |||||
言語 | en | |||||
書誌情報 |
ja : 室蘭工業大学研究報告. 理工編 en : Memoirs of the Muroran Institute of Technology. Science and engineering 巻 34, p. 195-201, 発行日 1984-11-30 |
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出版者 | ||||||
言語 | ja | |||||
出版者 | 室蘭工業大学 | |||||
論文ID(NAID) | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | NAID | |||||
関連識別子 | 40003627607 | |||||
日本十進分類法 | ||||||
主題Scheme | NDC | |||||
主題 | 431.75 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 05802415 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00238225 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |