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シリコン陽極酸化膜のSi/SiO₂界面の改善に関する研究
http://hdl.handle.net/10258/722
http://hdl.handle.net/10258/72205810848-ed5b-45b8-94d3-86b2840e0e40
名前 / ファイル | ライセンス | アクション |
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kiyo37_rikou_pp81-88.pdf (698.3 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2014-03-04 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | シリコン陽極酸化膜のSi/SiO₂界面の改善に関する研究 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Improvement of Interface between Anodically Grown Silicon Dioxide and Silicon | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
南條, 淳二
× 南條, 淳二× 水谷, 和宏× 吉野, 正樹× 野村, 滋 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Properties of Si/SiO₂ interface, whose oxide is anodically grown, have been improved by annealing the specimen at low temperature in hydrogen gas. The properties have been characterized by MOS C-V method, AES and SIMS methods. Hydroxyl groups contained in the as-grown anodic oxide films are resolved into oxygen and hydrogen and they combines with silicon dangling bond during annealing. The oxide annealed at 600℃ changes to stoichiometric SiO₂, but because the Si-H bonds are not stable, the transition region at Si/SiO₂ interface get rough and surface state density increases. With annealing at 450℃ Si-H bonds in the oxide and Si/SiO₂ interface become stable and surface state density decreases, but the composition of the oxide is silicon rich type. It was found that optimum annealing condition for getting the high quality composition and Si/SiO₂ interface is to anneal the grown oxide first at 600℃ and then followed by at 450℃. | |||||
言語 | en | |||||
書誌情報 |
ja : 室蘭工業大学研究報告. 理工編 en : Memoirs of the Muroran Institute of Technology. Science and engineering 巻 37, p. 81-88, 発行日 1987-11-10 |
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出版者 | ||||||
言語 | ja | |||||
出版者 | 室蘭工業大学 | |||||
論文ID(NAID) | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | NAID | |||||
関連識別子 | 40003627665 | |||||
日本十進分類法 | ||||||
主題Scheme | NDC | |||||
主題 | 541.65 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 05802415 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00238225 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |