{"created":"2023-06-19T10:29:55.947545+00:00","id":10019,"links":{},"metadata":{"_buckets":{"deposit":"4404f69f-337d-48be-b92a-d59ab2d9d34f"},"_deposit":{"created_by":18,"id":"10019","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"10019"},"status":"published"},"_oai":{"id":"oai:muroran-it.repo.nii.ac.jp:00010019","sets":["216:273","46"]},"author_link":["56475","56472","56471","54724","9585"],"item_79_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-05-30","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"SE","bibliographicPageStart":"SEED06","bibliographicVolumeNumber":"58","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_79_description_23":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_79_description_7":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Plasma enhanced chemical vapor deposition (PECVD) of silicon oxide (SiO2) using tetraethoxysilane (TEOS) was investigated theoretically by developing an unprecedented plasma chemistry model in TEOS/O2/Ar/He gas mixture. In the gas phase reactions, a TEOS molecule is decomposed by the electron impact reaction and/or chemically oxidative reaction, forming intermediate TEOS fragments, i.e., silicon complexes. In this study, we assume that SiO is the main precursor that contributes to SiO2 film growth under a particular process or simulation condition. The surface reaction was also investigated using quantum mechanical simulations with density functional theory. Based on the gas and surface reaction models, we constructed a computational plasma model for SiO2 film deposition in a PECVD process. The simulation results using CHEMKIN pro and CFD-ACE + have shown that the neutral atomic O and SiO as well as the charged O2 + are the dominant species to obtain a high deposition rate and uniformity. The spatial distributions of various species in the TEOS/O2/Ar/He gas mixture plasma were shown in the study. The uniformity of deposited film due to the change in the plasma bulk property was also discussed.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_79_link_17":{"attribute_name":"出版者版へのリンク","attribute_value_mlt":[{"subitem_link_text":"10.7567/1347-4065/ab163d","subitem_link_url":"https://doi.org/10.7567/1347-4065/ab163d"}]},"item_79_link_5":{"attribute_name":"室蘭工業大学研究者データベースへのリンク","attribute_value_mlt":[{"subitem_link_text":"佐藤 孝紀（SATOH Kohki）","subitem_link_url":"http://rdsoran.muroran-it.ac.jp/html/100000024_ja.html"}]},"item_79_publisher_11":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Japan Society of Applied Physics","subitem_publisher_language":"en"}]},"item_79_relation_18":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.7567/1347-4065/ab163d","subitem_relation_type_select":"DOI"}}]},"item_79_rights_19":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2019 Japan Society of Applied Physics","subitem_rights_language":"en"}]},"item_79_source_id_12":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-4922","subitem_source_identifier_type":"PISSN"}]},"item_79_source_id_14":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12295836","subitem_source_identifier_type":"NCID"}]},"item_79_subject_9":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"501","subitem_subject_scheme":"NDC"}]},"item_79_version_type_21":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"LI, Hu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"HIGUCHI, Hisashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"川口, 悟","creatorNameLang":"ja"},{"creatorName":"KAWAGUCHI, Satoru","creatorNameLang":"en"},{"creatorName":"カワグチ, サトル","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{}],"affiliationNames":[{},{}]}],"creatorNames":[{"creatorName":"佐藤,  孝紀","creatorNameLang":"ja"},{"creatorName":"サトウ, コウキ","creatorNameLang":"ja-Kana"},{"creatorName":"SATOH, Kohki","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"DENPOH, Kazuki","creatorNameLang":"en"},{"creatorName":"伝宝, 一樹","creatorNameLang":"ja"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-05-30"}],"displaytype":"detail","filename":"JJAP_58_SE_SEED06.pdf","filesize":[{"value":"1.5 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JJAP_58_SE_SEED06","objectType":"fulltext","url":"https://muroran-it.repo.nii.ac.jp/record/10019/files/JJAP_58_SE_SEED06.pdf"},"version_id":"502653cc-ab3c-4c62-b1bf-41cfed8269c5"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Computational study on silicon oxide plasma enhanced chemical vapor deposition (PECVD) process using tetraethoxysilane/oxygen/argon/helium","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Computational study on silicon oxide plasma enhanced chemical vapor deposition (PECVD) process using tetraethoxysilane/oxygen/argon/helium","subitem_title_language":"en"}]},"item_type_id":"79","owner":"18","path":["46","273"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2019-07-24"},"publish_date":"2019-07-24","publish_status":"0","recid":"10019","relation_version_is_last":true,"title":["Computational study on silicon oxide plasma enhanced chemical vapor deposition (PECVD) process using tetraethoxysilane/oxygen/argon/helium"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2023-11-09T07:43:41.371056+00:00"}