@article{oai:muroran-it.repo.nii.ac.jp:00010029,
 author = {川口, 悟 and KAWAGUCHI, Satoru and HIGUCHI, Hisashi and LI, Hu and TAKAHASHI, Kazuhiro and 髙橋, 一弘 and 佐藤,  孝紀 and SATOH, Kohki},
 issue = {6},
 journal = {Japanese Journal of Applied Physics},
 month = {Jun},
 note = {application/pdf, Reactions for dissociative ionization and neutral dissociation collisions between an electron and a tetraethoxysilane [Si(OC2H5)4, TEOS] molecule are reported, and neutral dissociation cross sections are calculated by applying the classical Rice–Ramsperger–Kassel theory. Detailed electron collision cross section set of TEOS vapor, including 18 neutral dissociation cross sections and 20 ionization cross sections, is constructed. Electron transport coefficients, such as the mean-arrival-time drift velocity, bulk drift velocity, longitudinal bulk diffusion coefficient, and ionization coefficient, and rate coefficients for both elastic and inelastic collisions in TEOS vapor are calculated from the present cross section set using a Monte Carlo method. The validity of the present cross section set is demonstrated by comparing the calculated electron transport coefficients with measured data. Furthermore, fragmentation of TEOS molecules by electron impact is simulated, and then the number of fragments produced in the simulation is compared with the measured mass spectra.},
 title = {Dissociative reactions induced by electron impact and electron transport in TEOS vapor},
 volume = {58},
 year = {2019},
 yomi = {カワグチ, サトル and タカハシ, カズヒロ and サトウ, コウキ}
}