@article{oai:muroran-it.repo.nii.ac.jp:00010226,
 author = {福田,  永 and FUKUDA, Hisashi and 夛田,  芳広 and TADA, Yoshihiro},
 journal = {室蘭工業大学紀要, Memoirs of the Muroran Institute of Technology},
 month = {Mar},
 note = {application/pdf, A novel device based on nanometer size platinum (Pt) on the gate electrode of metal-oxidesemiconductor field-effect transistor (MOSFET) for detecting hydrogen (H2) gas was fabricated. The operation characteristics of the device for the detection of H2 gas presents as a function of H2 gas concentration. The drain current in the output characteristics of the MOSFET increased rapidly depending on the H2 gas concentration. It was possible to detect 1,000 ppm for H2 gas at room temperature. A model was proposed to explain the operation. The sensing mechanism of the device is supported well by the experimental data., 学術論文},
 pages = {77--83},
 title = {白金ナノ粒子を用いた電界効果トランジスタ型センサの水素応答特性},
 volume = {69},
 year = {2020},
 yomi = {フクダ, ヒサシ and タダ, ヨシヒロ}
}