{"created":"2023-06-19T10:30:04.512973+00:00","id":10226,"links":{},"metadata":{"_buckets":{"deposit":"4d0520c2-ae38-478e-b9bf-b015d1b4b80f"},"_deposit":{"created_by":18,"id":"10226","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"10226"},"status":"published"},"_oai":{"id":"oai:muroran-it.repo.nii.ac.jp:00010226","sets":["216:408:236","216:408:392","35:488"]},"author_link":["51206","10083"],"item_77_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-03-19","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"83","bibliographicPageStart":"77","bibliographicVolumeNumber":"69","bibliographic_titles":[{"bibliographic_title":"室蘭工業大学紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of the Muroran Institute of Technology","bibliographic_titleLang":"en"}]}]},"item_77_description_23":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_77_description_7":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"A novel device based on nanometer size platinum (Pt) on the gate electrode of metal-oxidesemiconductor field-effect transistor (MOSFET) for detecting hydrogen (H2) gas was fabricated. The operation characteristics of the device for the detection of H2 gas presents as a function of H2 gas concentration. The drain current in the output characteristics of the MOSFET increased rapidly depending on the H2 gas concentration. It was possible to detect 1,000 ppm for H2 gas at room temperature. A model was proposed to explain the operation. The sensing mechanism of the device is supported well by the experimental data.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_77_description_8":{"attribute_name":"注記","attribute_value_mlt":[{"subitem_description":"学術論文","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_77_link_5":{"attribute_name":"室蘭工業大学研究者データベースへのリンク","attribute_value_mlt":[{"subitem_link_text":"福田 永（FUKUDA Hisashi）","subitem_link_url":"http://rdsoran.muroran-it.ac.jp/html/100000255_ja.html"}]},"item_77_publisher_11":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"室蘭工業大学","subitem_publisher_language":"ja"}]},"item_77_rights_19":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© copyright 2020 室蘭工業大学","subitem_rights_language":"ja"}]},"item_77_source_id_12":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13442708","subitem_source_identifier_type":"PISSN"}]},"item_77_source_id_14":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11912609","subitem_source_identifier_type":"NCID"}]},"item_77_subject_9":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"549","subitem_subject_scheme":"NDC"}]},"item_77_version_type_21":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"福田,  永","creatorNameLang":"ja"},{"creatorName":"FUKUDA, Hisashi","creatorNameLang":"en"},{"creatorName":"フクダ, ヒサシ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"夛田,  芳広","creatorNameLang":"ja"},{"creatorName":"TADA, Yoshihiro","creatorNameLang":"en"},{"creatorName":"タダ, ヨシヒロ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-03-23"}],"displaytype":"detail","filename":"69_77.pdf","filesize":[{"value":"1.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"69_77","objectType":"fulltext","url":"https://muroran-it.repo.nii.ac.jp/record/10226/files/69_77.pdf"},"version_id":"6033abc1-e17e-4d08-874e-3b671458d307"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Gas sensor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Platinum particle","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"白金ナノ粒子を用いた電界効果トランジスタ型センサの水素応答特性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"白金ナノ粒子を用いた電界効果トランジスタ型センサの水素応答特性","subitem_title_language":"ja"},{"subitem_title":"Response to Hydrogen in Field-effect Transistor Sensor with Platinum Nanoparticles","subitem_title_language":"en"}]},"item_type_id":"77","owner":"18","path":["488","236","392"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-03-23"},"publish_date":"2020-03-23","publish_status":"0","recid":"10226","relation_version_is_last":true,"title":["白金ナノ粒子を用いた電界効果トランジスタ型センサの水素応答特性"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2023-10-25T06:27:27.646463+00:00"}