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RFプラズマCVD法による絶縁膜堆積と発光分光測定に関する研究
https://doi.org/10.15118/00005127
https://doi.org/10.15118/0000512794ea023d-4606-46af-bf10-fa7455945d98
| 名前 / ファイル | ライセンス | アクション |
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A371 (5.0 MB)
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A371_summary (365.1 kB)
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| アイテムタイプ | 学位論文 / Thesis or Dissertation(1) | |||||||||||||
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| 公開日 | 2015-06-11 | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | RFプラズマCVD法による絶縁膜堆積と発光分光測定に関する研究 | |||||||||||||
| 言語 | ja | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | jpn | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_db06 | |||||||||||||
| 資源タイプ | doctoral thesis | |||||||||||||
| ID登録 | ||||||||||||||
| ID登録 | 10.15118/00005127 | |||||||||||||
| ID登録タイプ | JaLC | |||||||||||||
| アクセス権 | ||||||||||||||
| アクセス権 | open access | |||||||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||||
| 著者 |
熊懐, 正彦
× 熊懐, 正彦
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| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | Recently, as a great demand for high-strength and high-hardness materials is rising, improvement in performance of tools which manufacture those materials is being needed. In this research, we prepared boron-nitride (BN) and silicon carbide nitride (SICN) thin films using RF plasma CVD method and evaluated them, and newly developed a plasma spectroscopic measurement instrument by an image processing method for the purpose of investigation into the characteristics of plasma. This paper is composed of 5 chapters. In chapter 1, outlines of RF plasma and deposition techniques of thin films are discussed. In chapter 2, development of a plasma spectroscopic measurement, comparison between newer system and older one, and properness of image processing techniques are discussed. As results, newer one has compatibility with older one sufficiently. Besides, noise suppression and improvement of S/N ratio was achieved by some image processing techniques. Moreover, such high-speed photography as 983fps was achieved. In chapter 3, deposition and evaluation of BN thin films using a mixture of Trimethylborate (TMB: B(OCH3)3), nitrogen, and argon gas is discussed. At the condition of 10sccm in Ar and N2 flow rate, 80Pa in pressure, 10% in mixture rate of TMB, 13.56MHz in RF frequency, 2 difference experiments are done: (1)the substrate electrode was grounded, (2)DC bias voltage was supplied to the substrate electrode. Substrate was not heated. On the experiment (1), as the power was set to 80W, the infrared absorption peaks of B-O-N, B-O, and h-BN became the highest, the hardness of the films turned 2589Hv. On the experiment (2), as the power was set to 80W, bias voltage to -200V, the infrared absorption peaks of B-O-N, c-BN, and h-BN became the highest, the hardness of the films turned 4330Hv, the highest value on this experiment. This results depends on the smoothing and densification by spattering of Ar+ ions. As results, the deposition of high-hardness BN films using TMB, safety material gas, by a common charge-coupled plasma CVD method was proposed. In chapter 4, low-temperature deposition and evaluation of SiCN thin films using a mixture of Tetramethylsilane (TMS: Si(CH3)4), nitrogen, and hydrogen gas is discussed. It was found that the temperature of substrate increased elimination and absorption reaction on the surface, and a fine film could be deposited at the temperature of 973K. To deposit SiCN with lower temperature, H2 flow rate was changed. As results, it was found that H2 flow rate had great influence on the efficiency of decomposition of TMS. Moreover, the roughness of substrate was affected by the mixture rate of TMS. We could obtain the films nearly similar to the 973K ones at the state of 100Pa of pressure, 773K of substrate temperature, 80sccm of H2 flow rate, and TMS mixture rate of 3% to 5%. In particular, 5% of TMS mixture rate could be considered as the best condition on this experiment. In chapter 5, conclusions based on the experiments were descrobed. | |||||||||||||
| 言語 | en | |||||||||||||
| 学位授与機関 | ||||||||||||||
| 学位授与機関識別子Scheme | kakenhi | |||||||||||||
| 学位授与機関識別子 | 10103 | |||||||||||||
| 学位授与機関名 | 室蘭工業大学 | |||||||||||||
| 言語 | ja | |||||||||||||
| 学位授与機関名 | Muroran Institute of Technology | |||||||||||||
| 言語 | en | |||||||||||||
| 学位名 | ||||||||||||||
| 学位名 | 博士（工学） | |||||||||||||
| 言語 | ja | |||||||||||||
| 学位の種別 | ||||||||||||||
| 言語 | ja | |||||||||||||
| 値 | 課程博士 | |||||||||||||
| 学位授与番号 | ||||||||||||||
| 学位授与番号 | 甲第371号 | |||||||||||||
| 報告番号 | ||||||||||||||
| 言語 | ja | |||||||||||||
| 値 | 甲第371号 | |||||||||||||
| 学位記番号 | ||||||||||||||
| 言語 | ja | |||||||||||||
| 値 | 博甲第371号 | |||||||||||||
| 学位授与年月日 | ||||||||||||||
| 学位授与年月日 | 2015-03-23 | |||||||||||||
| 日本十進分類法 | ||||||||||||||
| 主題Scheme | NDC | |||||||||||||
| 主題 | 541 | |||||||||||||
| 著者版フラグ | ||||||||||||||
| 出版タイプ | VoR | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||
| フォーマット | ||||||||||||||
| 内容記述タイプ | Other | |||||||||||||
| 内容記述 | application/pdf | |||||||||||||
