@article{oai:muroran-it.repo.nii.ac.jp:00006432,
 author = {OHTA, Michihiro and 平井,  伸治 and HIRAI, Shinji and KATO, Hisanaga and NISHIMURA, Toshiyuki and UEMURA, Yoichiro},
 issue = {4},
 journal = {Applied Physics Letters},
 month = {Jul},
 note = {application/pdf, The electrical resistivity, thermopower, and thermal conductivity have been measured for the lanthanum sesquisulfide (La2S3) of which the crystal phase is controlled by the Ti additive. In all the samples, the thermopower is negative between 300 and 1000 K. The sample with 8 wt % Ti, which consists almost of the cubic γ phase, behaves as a degenerate semiconductor. The thermoelectric figure of merit ZT increases with increasing temperature, reaching a value of 0.21 at 1000 K. In contrast, the sample with 2 wt % Ti consists almost of the tetragonal β phase. The transport mechanism can be well explained by the model of the Anderson localization. The ZT value increases abruptly with increasing temperature. At 1000 K, this ZT value is comparable with that of the sample with 8 wt % Ti.},
 pages = {42106-1--42106-3},
 title = {Thermoelectric properties of lanthanum sesquisulfide with Ti additive},
 volume = {87},
 year = {2005},
 yomi = {ヒライ, シンジ}
}