@article{oai:muroran-it.repo.nii.ac.jp:00008006,
 author = {尾崎, 正義 and OZAKI, Masayoshi and 小野, 正寛 and ONO, Masahiro and 小林, 秀寿 and KOBAYASHI, Hidetoshi and 南條,  淳二 and NANJO, Junji and 野村, 滋 and NOMURA, Shigeru and 原, 進一 and HARA, Shin-ichi},
 journal = {室蘭工業大学研究報告. 理工編, Memoirs of the Muroran Institute of Technology. Science and engineering},
 month = {Nov},
 note = {application/pdf, Photoelectrolysis of water with two types of semiconductor electrodes which are the Cr-doped single crystal TiO_2, and the Si/TiO_2, heterojunction has been investigated. The Photoresponse of Cr-doped TiO_2, electrode showed longer wave length (visible light region) spectral response than that of non-doped TiO_2, electrode. The visible light response is explained by the formation of the d-band due to Cr-doping below the conduction band edge of the TiO_2, in energy diagram. Photocurrent of Cr-doped TiO_2, electrode, however, decreased. This decrease is mainly due to the structural defects induced in the single crystal TiO_2 by high temperature treatment of Cr-doping resulted in localized deep levels in forbidden band. These deep levels enhance the recombination rate of the photo-generated carriers. The electrode of n-Si/TiO_2, heterojunction was fabricated by coating the Si substrate surface with TiO_2, thin film using CVD technique. The thickness of TiO_2 film determines of the onset potential of photocurrent. The onset potential were shifted to negative potential side with decreasing the TiO_2 film thickness.},
 pages = {195--201},
 title = {半導体電極を用いた水の光電気分解の研究},
 volume = {34},
 year = {1984},
 yomi = {オザキ, マサヨシ and オノ, マサヒロ and コバヤシ, ヒデトシ and ナンジョウ, ジュンジ and ノムラ, シゲル and ハラ, シンイチ}
}