{"created":"2023-06-19T10:28:33.770184+00:00","id":8006,"links":{},"metadata":{"_buckets":{"deposit":"24400539-82b6-44f5-9d84-b204180cd836"},"_deposit":{"created_by":18,"id":"8006","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"8006"},"status":"published"},"_oai":{"id":"oai:muroran-it.repo.nii.ac.jp:00008006","sets":["35:145"]},"author_link":["37227","36842","36843","36844","37224","36847"],"item_77_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1984-11-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"201","bibliographicPageStart":"195","bibliographicVolumeNumber":"34","bibliographic_titles":[{"bibliographic_title":"室蘭工業大学研究報告. 理工編","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of the Muroran Institute of Technology. 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This decrease is mainly due to the structural defects induced in the single crystal TiO_2 by high temperature treatment of Cr-doping resulted in localized deep levels in forbidden band. These deep levels enhance the recombination rate of the photo-generated carriers. The electrode of n-Si/TiO_2, heterojunction was fabricated by coating the Si substrate surface with TiO_2, thin film using CVD technique. The thickness of TiO_2 film determines of the onset potential of photocurrent. The onset potential were shifted to negative potential side with decreasing the TiO_2 film 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