@article{oai:muroran-it.repo.nii.ac.jp:00008300,
 author = {関根,  ちひろ and SEKINE, Chihiro and 木方, 邦宏 and KIHOU, Kunihiro and 稲葉,  匡 and INABA, Tadashi and 富樫, 孝裕 and TOGASHI, Takahiro and 城谷,  一民 and SHIROTANI, Ichimin and 本間, 徹生 and HONMA, Tetsuo},
 journal = {室蘭工業大学紀要, Memoirs of the Muroran Institute of Technology},
 month = {Nov},
 note = {application/pdf, The results of electrical resistivity measurements at low temperatures (2K.LEQ.T.LEQ.300K), high pressures (0.LEQ.P.LEQ.2GPa) and high magnetic fields (0.LEQ.B.LEQ.7T) are reported on two strongly correlated electron antiferromagnets; local-moment type antiferromagnet UPd2Si2 and itinerant antiferromagnet Ce(Ru0.85Rh0.15)2Si2. The obtained temperature-pressure phase diagram of UPd2 Si2 is explained by the axial-next-nearest-neighbor Ising(ANNNI) model. A strong dependence on pressure for the antiferromagnetic state of Ce(Ru0.85Rh0.15)2Si2 is consistent with the transition in being due to a Fermisurface instability.The results of electrical resistivity measurements at low temperatures (2K.LEQ.T.LEQ.300K), high pressures (0.LEQ.P.LEQ.2GPa) and high magnetic fields (0.LEQ.B.LEQ.7T) are reported on two strongly correlated electron antiferromagnets; local-moment type antiferromagnet UPd2Si2 and itinerant antiferromagnet Ce(Ru0.85Rh0.15)2Si2. The obtained temperature-pressure phase diagram of UPd2 Si2 is explained by the axial-next-nearest-neighbor Ising(ANNNI) model. A strong dependence on pressure for the antiferromagnetic state of Ce(Ru0.85Rh0.15)2Si2 is consistent with the transition in being due to a Fermisurface instability., 投稿論文},
 pages = {105--113},
 title = {多重極限下における電気抵抗測定による強相関電子系反強磁性体の研究},
 volume = {49},
 year = {1999},
 yomi = {セキネ, チヒロ and キホウ, クニヒロ and イナバ, タダシ and トガシ, タカヒロ and シロタニ, イチミン and ホンマ, テツオ}
}