@article{oai:muroran-it.repo.nii.ac.jp:00008359,
 author = {佐藤,  忠夫 and SATO, Tadao and 若柳,  俊一 and WAKAYANAGI, Shun-ichi and 渡邉,  孝幸 and WATANABE, Takayuki and 酒井,  彰 and SAKAI, Akira},
 journal = {室蘭工業大学紀要, Memoirs of the Muroran Institute of Technology},
 month = {Nov},
 note = {application/pdf, The sp2-bonded BN thin films were prepared onto the silicon substrate by RF ion plating under the conditions of supplied RF power of 18-110 W, substrate bias potential of -0.5kV, boron evaporation rate of 1.3 × 10-4kg/(㎡・s), vacuum chamber pressure of pN2+pAr=6.6 × 10-2Pa, and 21.7cm distance between substrate and vapar source. N/B atomic ratio of thc film increased with increases in pN2/(pN2+pAr) ratio and supplied RF power, The maximum ratio of the film oblained in this work was 0,95, when the film was prepared under the condition of supplied RF power of 110 W and pN2 =6.6×10-2Pa., 投稿論文},
 pages = {149--154},
 title = {反応性RFイオンプレーティング法によるBN皮膜の形成},
 volume = {52},
 year = {2002},
 yomi = {サトウ, タダオ and ワカヤナギ, シュンイチ and ワタナベ, タカユキ and サカイ, アキラ}
}