@article{oai:muroran-it.repo.nii.ac.jp:00008405,
 author = {福田,  永 and FUKUDA, Hisashi and 田中, 茂雄 and TANAKA, Shigeo and 渡邊, 幹夫 and WATANABE, Mikio and 佐藤,  孝紀 and SATOH, Kohki and 古川, 雅一 and FURUKAWA, Masakazu},
 journal = {室蘭工業大学紀要, Memoirs of the Muroran Institute of Technology},
 month = {Nov},
 note = {application/pdf, High density plasma is required for plasma processing in future ULSI fabrication. In this study, 2.45 GHz microwave of the TM01 mode in the circular wave guide was introduced through a dielectric disk plate window for generation of excited surface wave plasma. A high dose ion implanted resist ashing is performed using this apparatus. In the temperature rangeof 60 to 150 ℃, ashing rate for neutral hydrogen irradiation is higher than that of oxygen plasma. The results indicate that resist removal by hydrogen atoms is advantageous to enableto oxygen free and low temperature ashing., 特集 : 「2003年度実施の地域との共同研究の報告」},
 pages = {29--35},
 title = {表面波励起プラズマによる中性水素原子生成とレジストアッシングへの応用},
 volume = {54},
 year = {2004},
 yomi = {フクダ, ヒサシ and タナカ, シゲオ and ワタナベ, ミキオ and サトウ, コウキ and フルカワ, マサカズ}
}