{"created":"2023-06-19T10:28:50.314295+00:00","id":8405,"links":{},"metadata":{"_buckets":{"deposit":"f0c7d7eb-3f47-47f5-8d4b-b631a558b1f3"},"_deposit":{"created_by":18,"id":"8405","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"8405"},"status":"published"},"_oai":{"id":"oai:muroran-it.repo.nii.ac.jp:00008405","sets":["216:273","216:408:236","35:178"]},"author_link":["53999","52446","9585","10083","52447"],"item_77_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-11","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"35","bibliographicPageStart":"29","bibliographicVolumeNumber":"54","bibliographic_titles":[{"bibliographic_title":"室蘭工業大学紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of the Muroran Institute of Technology","bibliographic_titleLang":"en"}]}]},"item_77_description_23":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_77_description_7":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"High density plasma is required for plasma processing in future ULSI fabrication. In this study, 2.45 GHz microwave of the TM01 mode in the circular wave guide was introduced through a dielectric disk plate window for generation of excited surface wave plasma. A high dose ion implanted resist ashing is performed using this apparatus. In the temperature rangeof 60 to 150 ℃, ashing rate for neutral hydrogen irradiation is higher than that of oxygen plasma. The results indicate that resist removal by hydrogen atoms is advantageous to enableto oxygen free and low temperature ashing.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_77_description_8":{"attribute_name":"注記","attribute_value_mlt":[{"subitem_description":"特集 : 「2003年度実施の地域との共同研究の報告」","subitem_description_language":"ja","subitem_description_type":"Other"}]},"item_77_link_5":{"attribute_name":"室蘭工業大学研究者データベースへのリンク","attribute_value_mlt":[{"subitem_link_text":"福田 永（FUKUDA Hisashi）","subitem_link_url":"http://rdsoran.muroran-it.ac.jp/html/100000255_ja.html"},{"subitem_link_text":"佐藤 孝紀（SATOH Kohki）","subitem_link_url":"http://rdsoran.muroran-it.ac.jp/html/100000024_ja.html"}]},"item_77_publisher_11":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"室蘭工業大学","subitem_publisher_language":"ja"}]},"item_77_relation_15":{"attribute_name":"論文ID（NAID）","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"110001263633","subitem_relation_type_select":"NAID"}}]},"item_77_rights_19":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2004 室蘭工業大学","subitem_rights_language":"ja"}]},"item_77_source_id_12":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13442708","subitem_source_identifier_type":"PISSN"}]},"item_77_source_id_14":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11912609","subitem_source_identifier_type":"NCID"}]},"item_77_subject_9":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"549","subitem_subject_scheme":"NDC"}]},"item_77_version_type_21":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open 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Masakazu","creatorNameLang":"en"},{"creatorName":"フルカワ, マサカズ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-02-16"}],"displaytype":"detail","filename":"54_irai04.pdf","filesize":[{"value":"377.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"54_irai04.pdf","objectType":"fulltext","url":"https://muroran-it.repo.nii.ac.jp/record/8405/files/54_irai04.pdf"},"version_id":"9ee707f5-ff5b-4231-8723-5e3b2e6338da"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"plasma processing","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"silicon process technology","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"ashing","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"neutral hydrogen","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"表面波励起プラズマによる中性水素原子生成とレジストアッシングへの応用","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"表面波励起プラズマによる中性水素原子生成とレジストアッシングへの応用","subitem_title_language":"ja"},{"subitem_title":"Neutral Hydrogen Atom Generation by Surface Wave Excitation Plasma and Its Application to Resist Ashing","subitem_title_language":"en"}]},"item_type_id":"77","owner":"18","path":["178","273","236"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-05-16"},"publish_date":"2007-05-16","publish_status":"0","recid":"8405","relation_version_is_last":true,"title":["表面波励起プラズマによる中性水素原子生成とレジストアッシングへの応用"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2024-01-25T02:43:28.877081+00:00"}