@article{oai:muroran-it.repo.nii.ac.jp:00009693,
 author = {Ebisu, Shuji and 戎, 修二 and ERA, T. and Guo, Q. and 宮崎, 正範 and MIYAZAKI, Masanori},
 issue = {1},
 journal = {Journal of Physics: Conference Series},
 month = {},
 note = {application/pdf, The electrical resistivity ρ and magnetization M of α-R 2S3 (R = Sm, Dy) single crystals have been measured in various magnetic fields lying in the ac-plane of an orthorhombic crystal structure. The measurements have been carried out by rotating the single crystals around the b-axis (being set parallel to a horizontal direction), corresponding to the longitudinal direction of needle-shaped single crystals, in vertical magnetic fields. The electrical resistivity under no magnetic field shows huge enhancement in a narrow temperature range around the successive magnetic transition temperatures, as reported previously. Such enhancement is suppressed rapidly by applying a magnetic field, which has been clearly seen as diminishing of the ρ(T) peak. The magnetic field along the easy magnetization axis; H easy, moves the ρ(T) peak toward higher temperature with diminishing it, while the magnetic field along the hard magnetization axis; H hard, moves it to lower temperature. The suppression effect is extremely anisotropic for the orientation of the magnetic field lying in the ac-plane. It has been concluded that H easy suppresses the ρ enhancement most strongly. The suppression effect under H easy is more than 200 times larger at least in some cases than that under H hard.},
 pages = {012124--012124},
 title = {Extremely anisotropic suppression of huge enhancement of electrical resistivity by magnetic field in α-R2S3 (R = Sm, Dy).},
 volume = {969},
 year = {2018},
 yomi = {エビス, シュウジ and ミヤザキ, マサノリ}
}