{"created":"2023-06-19T10:29:54.527398+00:00","id":9985,"links":{},"metadata":{"_buckets":{"deposit":"dcb6657d-b4a5-49d4-8440-e5af0f91a139"},"_deposit":{"created_by":18,"id":"9985","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"9985"},"status":"published"},"_oai":{"id":"oai:muroran-it.repo.nii.ac.jp:00009985","sets":["216:310","216:344","46"]},"author_link":["58311","56271","5742","56267","56269","56268","56272","46569","56266","20695","46570","46568"],"item_79_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-02-20","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageStart":"041005","bibliographicVolumeNumber":"88","bibliographic_titles":[{"bibliographic_title":"Journal of the Physical Society of Japan","bibliographic_titleLang":"en"}]}]},"item_79_description_23":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_79_description_7":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We report the electronic properties of the layered bismuth-based sulfide superconductors NdO1−xFxBiS2 (x = 0.25, 0.4, and 0.5) and La1−ySmyO0.5F0.5BiS2 (y = 0.1–0.7), which have been studied by investigation of their transport properties and X-ray diffraction. In the lightly carrier-doped NdO1−xFxBiS2 (x = 0.25 and 0.4) and La1−ySmyO0.5F0.5BiS2 (y = 0.3 and 0.4), the resistivity and Hall coefficient exhibit anomalous temperature dependences below TCDW ∼ 130 and 200 K, respectively, suggesting the formation of an energy gap on the Fermi surface associated with charge-density wave (CDW). In NdO1−xFxBiS2 (x = 0.25), the bond angles and bond lengths of the Bi–S pentahedron change their temperature dependences below ∼200 K, suggesting that a lattice instability related to the Bi–S pentahedron exists below ∼200 K, which is much higher than TCDW. These results indicate that the lattice instability of the Bi–S pentahedron can trigger a CDW transition in the low-carrier region of BiS2 superconductors.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_79_link_17":{"attribute_name":"出版者版へのリンク","attribute_value_mlt":[{"subitem_link_text":"10.7566/JPSJ.88.041005","subitem_link_url":"https://doi.org/10.7566/JPSJ.88.041005"}]},"item_79_link_5":{"attribute_name":"室蘭工業大学研究者データベースへのリンク","attribute_value_mlt":[{"subitem_link_text":"柴山 義行（SHIBAYAMA Yoshiyuki）","subitem_link_url":"http://rdsoran.muroran-it.ac.jp/html/100000036_ja.html"},{"subitem_link_text":"桃野 直樹（MOMONO Naoki）","subitem_link_url":"http://rdsoran.muroran-it.ac.jp/html/100000079_ja.html"}]},"item_79_publisher_11":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Physical Society of 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