| Item type |
学術雑誌論文 / Journal Article.(1) |
| 公開日 |
2019-07-24 |
| 書誌情報 |
en : Japanese Journal of Applied Physics
巻 58,
号 SE,
p. SEED06,
発行日 2019-05-30
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| タイトル |
|
|
タイトル |
Computational study on silicon oxide plasma enhanced chemical vapor deposition (PECVD) process using tetraethoxysilane/oxygen/argon/helium |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| アクセス権 |
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|
アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 著者 |
LI, Hu
HIGUCHI, Hisashi
川口, 悟
佐藤, 孝紀
伝宝, 一樹
|
| 室蘭工業大学研究者データベースへのリンク |
|
|
表示名 |
佐藤 孝紀（SATOH Kohki） |
|
URL |
http://rdsoran.muroran-it.ac.jp/html/100000024_ja.html |
| 抄録 |
|
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内容記述タイプ |
Abstract |
|
内容記述 |
Plasma enhanced chemical vapor deposition (PECVD) of silicon oxide (SiO2) using tetraethoxysilane (TEOS) was investigated theoretically by developing an unprecedented plasma chemistry model in TEOS/O2/Ar/He gas mixture. In the gas phase reactions, a TEOS molecule is decomposed by the electron impact reaction and/or chemically oxidative reaction, forming intermediate TEOS fragments, i.e., silicon complexes. In this study, we assume that SiO is the main precursor that contributes to SiO2 film growth under a particular process or simulation condition. The surface reaction was also investigated using quantum mechanical simulations with density functional theory. Based on the gas and surface reaction models, we constructed a computational plasma model for SiO2 film deposition in a PECVD process. The simulation results using CHEMKIN pro and CFD-ACE + have shown that the neutral atomic O and SiO as well as the charged O2 + are the dominant species to obtain a high deposition rate and uniformity. The spatial distributions of various species in the TEOS/O2/Ar/He gas mixture plasma were shown in the study. The uniformity of deposited film due to the change in the plasma bulk property was also discussed. |
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言語 |
en |
| 出版者 |
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出版者 |
Japan Society of Applied Physics |
|
言語 |
en |
| 出版者版へのリンク |
|
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表示名 |
10.7567/1347-4065/ab163d |
|
URL |
https://doi.org/10.7567/1347-4065/ab163d |
| DOI |
|
|
関連タイプ |
isVersionOf |
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|
識別子タイプ |
DOI |
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関連識別子 |
10.7567/1347-4065/ab163d |
| 日本十進分類法 |
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主題Scheme |
NDC |
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主題 |
501 |
| ISSN |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
0021-4922 |
| 書誌レコードID |
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収録物識別子タイプ |
NCID |
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収録物識別子 |
AA12295836 |
| 権利 |
|
|
言語 |
en |
|
権利情報 |
© 2019 Japan Society of Applied Physics |
| 著者版フラグ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| フォーマット |
|
|
内容記述タイプ |
Other |
|
内容記述 |
application/pdf |
JJAP_58_SE_SEED06 (1.5 MB)
