Item type |
学術雑誌論文 / Journal Article.(1) |
公開日 |
2022-03-23 |
書誌情報 |
en : MATERIALS
巻 14,
号 19,
p. 5773,
発行日 2021
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タイトル |
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タイトル |
Investigation on the Power Factor of Skutterudite Sm-y(FexNi1-x)(4)Sb-12 Thin Films: Effects of Deposition and Annealing Temperature |
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言語 |
en |
言語 |
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言語 |
eng |
キーワード |
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言語 |
en |
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主題Scheme |
Other |
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主題 |
thermoelectricity |
キーワード |
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言語 |
en |
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主題Scheme |
Other |
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主題 |
skutterudites |
キーワード |
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言語 |
en |
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主題Scheme |
Other |
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主題 |
thin films |
キーワード |
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言語 |
en |
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主題Scheme |
Other |
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主題 |
pulsed laser deposition |
キーワード |
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言語 |
en |
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主題Scheme |
Other |
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主題 |
power factor |
キーワード |
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言語 |
en |
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主題Scheme |
Other |
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主題 |
thermal conductivity |
資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
著者 |
Latronico, Giovanna
Mele, Paolo
Artini, Cristina
Manfrinetti, Pietro
Pan, Sian Wei
川村, 幸裕
関根, ちひろ
Singh, Saurabh
Takeuchi, Tsunehiro
Baba, Takahiro
Bourges, Cedric
Mori, Takao
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室蘭工業大学研究者データベースへのリンク |
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表示名 |
川村 幸裕(KAWAMURA Yukihiro) |
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URL |
http://rdsoran.muroran-it.ac.jp/html/100000227_ja.html |
室蘭工業大学研究者データベースへのリンク |
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表示名 |
関根 ちひろ(SEKINE Chihiro) |
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URL |
http://rdsoran.muroran-it.ac.jp/html/100000003_ja.html |
抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
Filled skutterudites are currently studied as promising thermoelectric materials due to their high power factor and low thermal conductivity. The latter property, in particular, can be enhanced by adding scattering centers, such as the ones deriving from low dimensionality and the presence of interfaces. This work reports on the synthesis and characterization of thin films belonging to the Sm-y(FexNi1-x)(4)Sb-12-filled skutterudite system. Films were deposited under vacuum conditions by the pulsed laser deposition (PLD) method on fused silica substrates, and the deposition temperature was varied. The effect of the annealing process was studied by subjecting a set of films to a thermal treatment for 1 h at 423 K. Electrical conductivity sigma and Seebeck coefficient S were acquired by the four-probe method using a ZEM-3 apparatus performing cycles in the 348-523 K temperature range, recording both heating and cooling processes. Films deposited at room temperature required three cycles up to 523 K before being stabilized, thus revealing the importance of a proper annealing process in order to obtain reliable physical data. XRD analyses confirm the previous result, as only annealed films present a highly crystalline skutterudite not accompanied by extra phases. The power factor of annealed films is shown to be lower than in the corresponding bulk samples due to the lower Seebeck coefficients occurring in films. Room temperature thermal conductivity, on the contrary, shows values comparable to the ones of doubly doped bulk samples, thus highlighting the positive effect of interfaces on the introduction of scattering centers, and therefore on the reduction of thermal conductivity. |
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言語 |
en |
出版者 |
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出版者 |
MDPI |
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言語 |
en |
出版者版へのリンク |
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表示名 |
10.3390/ma14195773 |
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URL |
https://doi.org/10.3390/ma14195773 |
DOI |
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関連タイプ |
isIdenticalTo |
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識別子タイプ |
DOI |
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関連識別子 |
10.3390/ma14195773 |
日本十進分類法 |
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主題Scheme |
NDC |
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主題 |
426 |
権利 |
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言語 |
en |
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権利情報 |
https://creativecommons.org/licenses/by/4.0/ |
著者版フラグ |
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出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
フォーマット |
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内容記述タイプ |
Other |
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内容記述 |
application/pdf |