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表面波励起プラズマによる中性水素原子生成とレジストアッシングへの応用
http://hdl.handle.net/10258/62
http://hdl.handle.net/10258/62b99f8b52-fef5-4f6e-aa73-36db690cbf38
名前 / ファイル | ライセンス | アクション |
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54_irai04.pdf (377.0 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||||||||
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公開日 | 2007-05-16 | |||||||||||
タイトル | ||||||||||||
言語 | ja | |||||||||||
タイトル | 表面波励起プラズマによる中性水素原子生成とレジストアッシングへの応用 | |||||||||||
タイトル | ||||||||||||
言語 | en | |||||||||||
タイトル | Neutral Hydrogen Atom Generation by Surface Wave Excitation Plasma and Its Application to Resist Ashing | |||||||||||
言語 | ||||||||||||
言語 | jpn | |||||||||||
キーワード | ||||||||||||
言語 | en | |||||||||||
主題Scheme | Other | |||||||||||
主題 | plasma processing | |||||||||||
キーワード | ||||||||||||
言語 | en | |||||||||||
主題Scheme | Other | |||||||||||
主題 | silicon process technology | |||||||||||
キーワード | ||||||||||||
言語 | en | |||||||||||
主題Scheme | Other | |||||||||||
主題 | ashing | |||||||||||
キーワード | ||||||||||||
言語 | en | |||||||||||
主題Scheme | Other | |||||||||||
主題 | neutral hydrogen | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
資源タイプ | departmental bulletin paper | |||||||||||
アクセス権 | ||||||||||||
アクセス権 | open access | |||||||||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||
著者 |
福田, 永
× 福田, 永× 田中, 茂雄× 渡邊, 幹夫× 佐藤, 孝紀
WEKO
9585
× 古川, 雅一 |
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室蘭工業大学研究者データベースへのリンク | ||||||||||||
福田 永(FUKUDA Hisashi) | ||||||||||||
http://rdsoran.muroran-it.ac.jp/html/100000255_ja.html | ||||||||||||
室蘭工業大学研究者データベースへのリンク | ||||||||||||
佐藤 孝紀(SATOH Kohki) | ||||||||||||
http://rdsoran.muroran-it.ac.jp/html/100000024_ja.html | ||||||||||||
抄録 | ||||||||||||
内容記述タイプ | Abstract | |||||||||||
内容記述 | High density plasma is required for plasma processing in future ULSI fabrication. In this study, 2.45 GHz microwave of the TM01 mode in the circular wave guide was introduced through a dielectric disk plate window for generation of excited surface wave plasma. A high dose ion implanted resist ashing is performed using this apparatus. In the temperature rangeof 60 to 150 ℃, ashing rate for neutral hydrogen irradiation is higher than that of oxygen plasma. The results indicate that resist removal by hydrogen atoms is advantageous to enableto oxygen free and low temperature ashing. | |||||||||||
言語 | en | |||||||||||
書誌情報 |
ja : 室蘭工業大学紀要 en : Memoirs of the Muroran Institute of Technology 巻 54, p. 29-35, 発行日 2004-11 |
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注記 | ||||||||||||
内容記述タイプ | Other | |||||||||||
内容記述 | 特集 : 「2003年度実施の地域との共同研究の報告」 | |||||||||||
言語 | ja | |||||||||||
出版者 | ||||||||||||
言語 | ja | |||||||||||
出版者 | 室蘭工業大学 | |||||||||||
論文ID(NAID) | ||||||||||||
関連タイプ | isIdenticalTo | |||||||||||
識別子タイプ | NAID | |||||||||||
関連識別子 | 110001263633 | |||||||||||
日本十進分類法 | ||||||||||||
主題Scheme | NDC | |||||||||||
主題 | 549 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | PISSN | |||||||||||
収録物識別子 | 13442708 | |||||||||||
書誌レコードID | ||||||||||||
収録物識別子タイプ | NCID | |||||||||||
収録物識別子 | AA11912609 | |||||||||||
権利 | ||||||||||||
言語 | ja | |||||||||||
権利情報 | © 2004 室蘭工業大学 | |||||||||||
著者版フラグ | ||||||||||||
出版タイプ | VoR | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
フォーマット | ||||||||||||
内容記述タイプ | Other | |||||||||||
内容記述 | application/pdf |